Datasheet

NXP Semiconductors
PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor
PBSS5130T All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 July 2013 3 / 11
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -30 V
V
CEO
collector-emitter voltage open base - -30 V
V
EBO
emitter-base voltage open collector - -5 V
I
C
collector current - -1 A
I
CM
peak collector current - -3 A
I
BM
peak base current
single pulse; t
p
≤ 1 ms
- -300 mA
[1] - 300 mWP
tot
total power dissipation T
amb
≤ 25 °C
[2] - 480 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 417 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - - 260 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.