Datasheet

2003 Sep 29 4
NXP Semiconductors Product data sheet
20 V, 1 A
PNP low V
CEsat
(BISS) transistor
PBSS5120T
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −20 V; I
E
= 0 − − −100 nA
V
CB
= −20 V; I
E
= 0; T
j
= 150 °C − − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −4 V; I
C
= 0 − − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −100 mA 300 450 −
V
CE
= −2 V; I
C
= −500 mA 250 350 −
V
CE
= −2 V; I
C
= −1 A 200 290 −
V
CEsat
collector-emitter saturation
voltage
I
C
= −100 mA; I
B
= −1 mA − − −100 mV
I
C
= −500 mA; I
B
= −50 mA − − −125 mV
I
C
= −1 A; I
B
= −50 mA − − −250 mV
R
CEsat
equivalent on-resistance I
C
= −500 mA; I
B
= −50 mA; note 1 − − 250 mΩ
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −100 mA − − −0.75 V
f
T
transition frequency I
C
= −100 mA; V
CE
= −10 V;
f
= 100 MHz
100 − − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0; f = 1 MHz − − 28 pF