Datasheet

2003 Sep 29 2
NXP Semiconductors Product data sheet
20 V, 1 A
PNP low V
CEsat
(BISS) transistor
PBSS5120T
FEATURES
• Low collector-emitter saturation voltage V
CEsat
• High collector current capability I
C
and I
CM
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative for MOSFETs in specific
applications.
APPLICATIONS
• Power management
– DC/DC conversion
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
PNP BISS transistor in a SOT23 plastic package providing
ultra low V
CEsat
and R
CEsat
parameters.
NPN complement: PBSS4120T.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PBSS5120T *3K
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −20 V
I
C
collector current (DC) −1 A
I
CM
peak collector current −2 A
R
CEsat
equivalent on-resistance 250 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM256
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS5120T − plastic surface mounted package; 3 leads SOT23