Datasheet
NXP Semiconductors
PBSS5112PAP
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5112PAP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 30 November 2012 10 / 17
Symbol Parameter Conditions Min Typ Max Unit
I
C
= -1 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- - -1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
= -2 V; I
C
= -0.5 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- - -0.9 V
t
d
delay time - 15 - ns
t
r
rise time - 245 - ns
t
on
turn-on time - 260 - ns
t
s
storage time - 290 - ns
t
f
fall time - 270 - ns
t
off
turn-off time
V
CC
= -10 V; I
C
= -500 mA;
I
Bon
= -25 mA; I
Boff
= 25 mA;
T
amb
= 25 °C
- 560 - ns
f
T
transition frequency V
CE
= -10 V; I
C
= -50 mA; f = 100 MHz;
T
amb
= 25 °C
50 100 - MHz
C
c
collector capacitance V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 9.5 13 pF
aaa-005721
200
400
600
h
FE
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
V
CE
= −2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 -5-4-2 -3-1
aaa-005722
-0.5
-1.0
-1.5
I
C
(A)
0.0
I
B
= -90 mA
-81
-72
-63
-54
-45
-36
-27
-18
-9
T
amb
= 25 °C
Fig. 11. Collector current as a function of collector-
emitter voltage; typical values