Datasheet

PBSS4580PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 15 April 2010 6 of 15
NXP Semiconductors
PBSS4580PA
80 V, 5.6 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
=64V; I
E
= 0 A - - 100 nA
V
CB
=64V; I
E
=0A;
T
j
= 150 °C
--50μA
I
CES
collector-emitter
cut-off current
V
CE
=64V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base
cut-off current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V
[1]
I
C
= 0.5 A 270 425 -
I
C
= 1 A 240 375 -
I
C
= 2 A 150 245 -
I
C
=6A 45 75 -
V
CEsat
collector-emitter
saturation voltage
I
C
=0.5A; I
B
=50mA
[1]
- 2535mV
I
C
=1A; I
B
=50mA
[1]
- 5070mV
I
C
=1A; I
B
=10mA
[1]
- 85 120 mV
I
C
=2A; I
B
=20mA
[1]
- 150 220 mV
I
C
=3A; I
B
=30mA
[1]
- 265 360 mV
I
C
=4A; I
B
= 400 mA
[1]
- 155 210 mV
I
C
=5.6A; I
B
= 280 mA
[1]
- 230 320 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=5.6A; I
B
= 280 mA
[1]
- 4057mΩ
V
BEsat
base-emitter
saturation voltage
I
C
=1A; I
B
=10mA
[1]
- 0.74 0.9 V
I
C
=5.6A; I
B
= 280 mA
[1]
-11.1V
V
BEon
base-emitter
turn-on voltage
V
CE
=2V; I
C
=2A
[1]
- 0.76 0.9 V
t
d
delay time V
CC
=9V; I
C
=2A;
I
Bon
=0.1A;
I
Boff
= −0.1 A
-21-ns
t
r
rise time - 162 - ns
t
on
turn-on time - 183 - ns
t
s
storage time - 720 - ns
t
f
fall time - 205 - ns
t
off
turn-off time - 925 - ns
f
T
transition frequency V
CE
=10V;
I
C
=100mA;
f=100MHz
95 155 - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- 2025pF