Datasheet

PBSS4580PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 15 April 2010 5 of 15
NXP Semiconductors
PBSS4580PA
80 V, 5.6 A NPN low V
CEsat
(BISS) transistor
FR4 PCB, mounting pad for collector 6 cm
2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab981
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
006aab982
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
1
10
2
Z
th(j-a)
(K/W)
10
−1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75