Datasheet

2001 Nov 14 4
NXP Semiconductors Product data sheet
40 V low V
CEsat
NPN transistor
PBSS4540Z
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 30 V; I
E
= 0 100 nA
V
CB
= 30 V; I
E
= 0; T
j
= 150 °C 50 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 100 nA
h
FE
DC current gain V
CE
= 2 V; I
C
= 500 mA 300 500
V
CE
= 2 V; I
C
= 1 A; note 1 300 500
V
CE
= 2 V; I
C
= 2 A; note 1 250 450
V
CE
= 2 V; I
C
= 5 A; note 1 100 300
V
CEsat
collector-emitter saturation voltage I
C
= 500 mA; I
B
= 5 mA 50 90 mV
I
C
= 1 A; I
B
= 10 mA 75 120 mV
I
C
= 2 A; I
B
= 200 mA 90 150 mV
I
C
= 5 A; I
B
= 500 mA 210 355 mV
R
CEsat
equivalent on-resistance I
C
= 5 A; I
B
= 500 mA; note 1 42 71 mΩ
V
BEsat
base-emitter saturation voltage I
C
= 5 A; I
B
= 500 mA 1.1 1.3 V
V
BEon
base-emitter turn-on voltage V
CE
= 2 V; I
C
=2 A 0.8 1.1 V
f
T
transition frequency I
C
= 100 mA; V
CE
= 10 V;
f
= 100 MHz
70 130 MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0;
f
= 1 MHz
60 75 pF