Datasheet

2001 Nov 14 2
NXP Semiconductors Product data sheet
40 V low V
CEsat
NPN transistor
PBSS4540Z
FEATURES
Low collector-emitter saturation voltage
High current capabilities
Improved device reliability due to reduced heat
generation.
APPLICATIONS
Supply line switching circuits
Battery management applications
DC/DC converter applications
Strobe flash units
Heavy duty battery powered equipment (motor and lamp
drivers)
MOSFET driver applications.
DESCRIPTION
NPN low V
CEsat
transistor in a SOT223 plastic package.
PNP complement: PBSS5540Z.
MARKING
TYPE NUMBER MARKING CODE
PBSS4540Z PB4540
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
4 collector
handbook, halfpage
4
123
MAM287
Top view
3
2, 4
1
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX UNIT
V
CEO
emitter-collector voltage 40 V
I
C
collector current (DC) 5 A
I
CM
peak collector current 10 A
R
CEsat
equivalent on-resistance <71 mΩ