Datasheet

2004 Nov 04 2
NXP Semiconductors Product data sheet
40 V, 5 A
PNP low V
CEsat
(BISS) transistor
PBSS5540X
FEATURES
• Low collector-emitter saturation voltage V
CEsat
• High collector current capability: I
C
and I
CM
• High efficiency leading to less heat generation.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Medium power driver (e.g. relays, buzzers and motors).
DESCRIPTION
PNP low V
CEsat
transistor in a medium power SOT89
(SC-62) package.
NPN complement: PBSS4540X.
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PBSS5540X *1G
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −40 V
I
C
collector current (DC) −4 A
I
CRP
repetitive peak collector
current
−5 A
R
CEsat
equivalent
on-resistance
75 mΩ
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
sym07
9
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS5540X SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89