Datasheet

2004 Oct 25 9
NXP Semiconductors Product data sheet
80 V, 4 A
NPN low V
CEsat
(BISS) transistor
PBSS4480X
001aaa736
0.4
0.8
1.2
V
BEsat
(V)
0
I
C
(mA)
10
1
10
4
10
3
110
2
10
(2)
(1)
(3)
I
C
/I
B
= 20.
(1) T
amb
= 55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 100 °C.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
(mA)
10
1
10
4
10
3
110
2
10
001aaa738
1
10
1
10
2
10
10
3
R
CEsat
(Ω)
10
2
(1)
(3)
(2)
I
C
/I
B
= 20.
(1) T
amb
= 100 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 55 °C.
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
V
CE
(V)
021.60.8 1.20.4
001aaa733
4
6
2
8
10
I
C
(A)
0
(6)
(5)
(9)
(8)
(1)
(7)
(10)
(2)(3)(4)
(1) I
B
= 190 mA.
(2) I
B
= 171 mA.
(3) I
B
= 152 mA.
(4) I
B
= 133 mA.
(5) I
B
= 114 mA.
(6) I
B
= 95 mA.
(7) I
B
= 76 mA.
(8) I
B
= 57 mA.
(9) I
B
= 38 mA.
(10) I
B
= 19 mA.
Fig.12 Collector current as a function of
collector-emitter voltage; typical values.
001aab321
0.4
0.8
1.2
V
BEon
(V)
0
I
C
(mA)
10
1
10
4
10
3
110
2
10
Fig.13 Base-emitter turn-on voltage as a function
of collector current; typical values.
T
amb
= 25 °C.