Datasheet

2004 Oct 25 7
NXP Semiconductors Product data sheet
80 V, 4 A
NPN low V
CEsat
(BISS) transistor
PBSS4480X
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 80 V; I
E
= 0 A 100 nA
V
CB
= 80 V; I
E
= 0 A;
T
j
= 150 °C
50 μA
I
CES
collector-emitter cut-off current V
CE
= 80 V; V
BE
= 0 V 100 nA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 A 100 nA
h
FE
DC current gain V
CE
= 2 V; I
C
= 0.5 A 250 400
V
CE
= 2 V; I
C
= 1 A; note 1 250 400
V
CE
= 2 V; I
C
= 2 A; note 1 175 270
V
CE
= 2 V; I
C
= 4 A; note 1 80 140
V
CEsat
collector-emitter saturation
voltage
I
C
= 0.5 A; I
B
= 50 mA 25 40 mV
I
C
= 1 A; I
B
= 50 mA 55 80 mV
I
C
= 2 A; I
B
= 40 mA 110 160 mV
I
C
= 4 A; I
B
= 200 mA;
note
1
170 230 mV
I
C
= 5 A; I
B
= 500 mA;
note
1
200 270 mV
R
CEsat
equivalent on-resistance I
C
= 5 A; I
B
= 500 mA;
note
1
40 54 mΩ
V
BEsat
base-emitter saturation voltage I
C
= 0.5 A; I
B
= 50 mA 0.78 0.85 V
I
C
= 1 A; I
B
= 50 mA 0.79 0.9 V
I
C
= 1 A; I
B
= 100 mA;
note
1
0.82 0.95 V
I
C
= 4 A; I
B
= 400 mA;
note
1
0.95 1.05 V
V
BEon
base-emitter turn-on voltage I
C
= 2 A; V
CE
= 2 V 0.78 0.85 V
f
T
transition frequency I
C
= 100 mA; V
CE
= 10 V;
f
= 100 MHz
120 150 MHz
C
c
collector capacitance I
E
= i
e
= 0 A; V
CB
= 10 V;
f
= 1 MHz
35 50 pF