Datasheet
2004 Oct 25 3
NXP Semiconductors Product data sheet
80 V, 4 A
NPN low V
CEsat
(BISS) transistor
PBSS4480X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Operated under pulsed conditions; pulse width t
p
≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
5. Device mounted on a 7 cm
2
ceramic printed-circuit board, 1 cm
2
single-sided copper and tin-plated. For other
mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 80 V
V
CEO
collector-emitter voltage open base − 80 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) note 4 − 4 A
I
CRM
repetitive peak collector current t
p
≤ 10 ms; δ ≤ 0.1 − 6 A
I
CM
peak collector current t = 1 ms or limited by T
j(max)
− 10 A
I
B
base current (DC) − 1 A
I
BM
peak base current t ≤ 300 μs − 2 A
P
tot
total power dissipation T
amb
≤ 25 °C
notes 1 and 2 − 2.5 W
note 2 − 550 mW
note 3 − 1 W
note 4 − 1.4 W
note 5 − 1.6 W
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C