Datasheet
2004 Oct 25 2
NXP Semiconductors Product data sheet
80 V, 4 A
NPN low V
CEsat
(BISS) transistor
PBSS4480X
FEATURES
• High h
FE
and low V
CEsat
at high current operation
• High collector current capability: I
C
maximum 4 A
• High efficiency leading to less heat generation.
APPLICATIONS
• Medium power peripheral drivers; e.g. fan, motor
• Strobe flash units for DSC and mobile phones
• Inverter applications; e.g. TFT displays
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers.
DESCRIPTION
NPN low V
CEsat
transistor in a SOT89 (SC-62) plastic
package.
PNP complement: PBSS5480X.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PBSS4480X *1Y
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 80 V
I
C
collector current (DC) 4 A
I
CM
peak collector current 10 A
R
CEsat
equivalent
on-resistance
54 mΩ
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
sym04
2
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS4480X − plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89