Datasheet

PBSS4440D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 6 of 13
NXP Semiconductors
PBSS4440D
40 V NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
= 25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= 40 V; I
E
= 0 A --0.1μA
V
CB
= 40 V; I
E
= 0 A; T
j
=150°C--50μA
I
CES
collector-emitter
cut-off current
V
CE
= 30 V; V
BE
= 0 V --0.1μA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A --0.1μA
h
FE
DC current gain V
CE
= 2 V; I
C
= 0.5 A 300 - -
V
CE
= 2 V; I
C
= 1 A
[1]
300 - -
V
CE
= 2 V; I
C
= 2 A
[1]
250 - -
V
CE
= 2 V; I
C
= 4 A
[1]
100 - -
V
CE
= 2 V; I
C
= 6 A
[1]
50 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 0.5 A; I
B
= 50 mA - 3560mV
I
C
= 1 A; I
B
= 50 mA - 65 110 mV
I
C
= 2 A; I
B
= 200 mA - 115 180 mV
I
C
= 4 A; I
B
= 400 mA
[1]
-220300mV
I
C
= 6 A; I
B
= 600 mA
[1]
-330450mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 6 A; I
B
= 600 mA
[1]
- 5575mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= 0.5 A; I
B
= 50 mA - 0.79 0.85 V
I
C
= 1 A; I
B
= 50 mA - 0.81 0.9 V
I
C
= 1 A; I
B
= 100 mA
[1]
-0.831V
I
C
= 4 A; I
B
= 400 mA
[1]
-1.01.1V
V
BEon
base-emitter turn-on
voltage
V
CE
= 2 V; I
C
= 2 A - 0.79 1.0 V
t
d
delay time V
CC
= 10 V; I
C
= 2 A; I
Bon
=0.1A;
I
Boff
= −0.1 A
-12-ns
t
r
rise time - 52 - ns
t
on
turn-on time - 64 - ns
t
s
storage time - 390 - ns
t
f
fall time - 120 - ns
t
off
turn-off time - 510 - ns
f
T
transition frequency V
CE
= 10 V; I
C
= 0.1 A;
f=100MHz
-150-MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A; f = 1 MHz - 30 - pF