Datasheet

PBSS4440D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 2 of 13
NXP Semiconductors
PBSS4440D
40 V NPN low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1 collector
2 collector
3base
4emitter
5 collector
6 collector
132
4
56
sym01
4
1, 2, 5, 6
4
3
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4440D SC-74 plastic surface mounted package; 6 leads SOT457
Table 4. Marking codes
Type number Marking code
PBSS4440D 61
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 40 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current (DC)
[1]
-4A
I
CM
peak collector current t = 1 ms or limited
by T
j(max)
-15A
I
B
base current (DC) - 0.8 A
I
BM
peak base current t
p
≤ 300 μs-2A
P
tot
total power dissipation T
amb
≤ 25 °C
[2]
-360mW
[3]
-600mW
[4]
-750mW
[1]
-1.1W
[2][5]
-2.5W