Datasheet
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 6 of 14
NXP Semiconductors
PBSS4420D
20 V, 4 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=20V; I
E
= 0 A - - 0.1 µA
V
CB
=20V; I
E
=0A;
T
j
= 150 °C
--50µA
I
CES
collector-emitter cut-off
current
V
CE
=20V; V
BE
=0V - - 0.1 µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 0.1 µA
h
FE
DC current gain V
CE
=2V; I
C
= 0.5 A 300 450 -
V
CE
=2V; I
C
=1A
[1]
300 430 -
V
CE
=2V; I
C
=2A
[1]
250 400 -
V
CE
=2V; I
C
=4A
[1]
200 310 -
V
CE
=2V; I
C
=6A
[1]
100 230 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 0.5 A; I
B
= 50 mA - 30 50 mV
I
C
= 1 A; I
B
= 50 mA - 60 90 mV
I
C
= 2 A; I
B
= 200 mA - 110 150 mV
I
C
= 4 A; I
B
= 400 mA
[1]
- 200 280 mV
I
C
= 6 A; I
B
= 600 mA
[1]
- 300 420 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 4 A; I
B
= 400 mA
[1]
- 5070mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= 0.5 A; I
B
= 50 mA - 0.79 0.85 V
I
C
= 1 A; I
B
= 50 mA - 0.81 0.9 V
I
C
= 1 A; I
B
= 100 mA
[1]
- 0.83 1 V
I
C
= 4 A; I
B
= 400 mA
[1]
- 1.0 1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
=2V; I
C
= 2 A - 0.79 1 V
t
d
delay time V
CC
= 12.5 V; I
C
=3A;
I
Bon
= 0.15 A;
I
Boff
= −0.15 A
-12-ns
t
r
rise time - 36 - ns
t
on
turn-on time - 48 - ns
t
s
storage time - 230 - ns
t
f
fall time - 50 - ns
t
off
turn-off time - 280 - ns
f
T
transition frequency V
CE
=10V; I
C
= 0.1 A;
f = 100 MHz
- 100 - MHz
C
c
collector capacitance V
CB
=10V;I
E
=i
e
=0A;
f=1MHz
-60-pF