Datasheet

2003 May 13 6
NXP Semiconductors Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350Z
handbook, halfpage
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
2
1200
1000
0
200
400
600
800
0.4 0.8 1.2 1.6
MGW179
V
CE
(V)
I
C
(mA)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 3.96 mA.
(2) I
B
= 3.63 mA.
(3) I
B
= 3.30 mA.
(4) I
B
= 2.97 mA.
(5) I
B
= 2.64 mA.
(6) I
B
= 2.31 mA.
(7) I
B
= 1.98 mA.
(8) I
B
= 1.65 mA.
(9) I
B
= 1.32 mA.
(10) I
B
= 0.99 mA.
(11) I
B
= 0.66 mA.
(12) I
B
= 0.33 mA.
V
CE
= 5 V.
handbook, halfpage
0
(4)
(3)
(2)
(5)
(6)
(7)
(8)
(9)
(10)
2
5
0
1
2
3
4
0.4 0.8 1.2 1.6
MGW180
V
CE
(V)
I
C
(A)
(1)
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
V
CE
= 5 V.
(1) I
B
= 150 mA.
(2) I
B
= 135 mA.
(3) I
B
= 120 mA.
(4) I
B
= 105 mA.
(5) I
B
= 90 mA.
(6) I
B
= 75 mA.
(7) I
B
= 60 mA.
(8) I
B
= 45 mA.
(9) I
B
= 30 mA.
(10) I
B
= 15 mA.
handbook, halfpage
I
C
(mA)
10
3
10
2
10
−1
10
−2
10
1
MGW182
10
−1
11010
2
10
3
10
4
R
CEsat
(Ω)
(1)
(2)
(3)
Fig.8 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C. (2) T
amb
= 25 °C. (3) T
amb
= −55 °C.