Datasheet

2003 May 13 2
NXP Semiconductors Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350Z
FEATURES
• Low collector-emitter saturation voltage
• High collector current capability: I
C
and I
CM
• High collector current gain (h
FE
) at high I
C
• Higher efficiency leading to less heat generation
• Reduced PCB area requirements compared to DPAK.
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– Linear voltage regulation (LDO).
• Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps,
LEDs
– Inductive load driver, e.g. relays, buzzers, motors.
DESCRIPTION
NPN low V
CEsat
transistor in a SOT223 plastic package.
PNP complement: PBSS5350Z.
MARKING
TYPE NUMBER MARKING CODE
PBSS4350Z PB4350
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
4 collector
handbook, halfpage
4
123
MAM287
Top view
3
2, 4
1
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 50 V
I
CM
peak collector current 5 A
R
CEsat
equivalent on-resistance <145 mΩ