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DATA SHEET

Product data sheet

Supersedes data of 2003 Jan 20

2003 May 13

DISCRETE SEMICONDUCTORS

PBSS4350Z

50 V low V

CEsat

NPN transistor

book, halfpage

M3D087

Summary of content (9 pages)

PAGE 1
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product data sheet Supersedes data of 2003 Jan 20 2003 May 13
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NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High collector current capability: IC and ICM VCEO collector-emitter voltage 50 V ICM peak collector current 5 A RCEsat equivalent on-resistance <145 mΩ • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation PARAMETER MAX. UNIT • Reduced PCB area requirements compared to DPAK.
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NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
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NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
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NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z MGW175 600 MGW176 1.2 VBE (V) 1.0 handbook, halfpage handbook, halfpage hFE 500 (1) (1) 0.8 400 (2) (2) 300 0.6 (3) 200 0.4 (3) 0.2 100 0 10 −1 1 10 102 0 10 −1 103 104 I C (mA) 1 VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
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NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z MGW180 MGW179 1200 5 handbook, halfpage handbook, halfpage I C (mA) 1000 (2) (3) (4) (5) (1) IC (A) (1) (2) 4 (6) (7) (3) (8) (4) 800 (5) 3 (9) (6) 600 (7) (10) 2 (8) 400 (9) (10) 200 1 (11) (12) 0 0 0.4 0 0.8 1.2 VCE = 5 V. (5) IB = 2.64 mA. (6) IB = 2.31 mA. (7) IB = 1.98 mA. (8) IB = 1.65 mA. (9) IB = 1.32 mA. (10) IB = 0.99 mA. (11) IB = 0.66 mA. (12) IB = 0.33 mA. (1) IB = 150 mA.
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NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.
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NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
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NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.