Datasheet

2004 Nov 04 9
Philips Semiconductors Product specification
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4350X
handbook, halfpage
MLE185
0.2
1.4
0.6
1
10
−1
110
I
C
(mA)
V
BEsat
(V)
10
2
10
3
10
4
(3)
(1)
(2)
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= −55 °C. (2) T
amb
=25°C. (3) T
amb
= 100 °C.
handbook, halfpage
10
3
10
2
10
1
10
−2
10
−1
MLE182
10
−1
110
I
C
(mA)
R
CEsat
(Ω)
10
3
10
2
10
4
(1)
(3)
(2)
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C. (2) T
amb
=25°C. (3) T
amb
= −55 °C.
handbook, halfpage
0
(1)
I
C
(mA)
V
CE
(V)
1200
800
400
0
0.4 2
0.8 1.2 1.6
MLE178
(9)
(10)
(7)
(5)
(4)
(3)
(2)
(6)
(8)
Fig.12 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 2600 µA.
(2) I
B
= 2340 µA.
(3) I
B
= 2080 µA.
(4) I
B
= 1820 µA.
(5) I
B
= 1560 µA.
(6) I
B
= 1300 µA.
(7) I
B
= 1040 µA.
(8) I
B
= 780 µA.
(9) I
B
= 520 µA.
(10) I
B
= 260 µA.
T
amb
=25°C.
handbook, halfpage
02
5
0
1
2
3
4
0.4
V
CE
(V)
I
C
(A)
0.8 1.2 1.6
MLE179
(1)
(8)
(9)
(10)
(2)(3)
(4)(5)(6)
(7)
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 120 mA.
(2) I
B
= 108 mA.
(3) I
B
= 96 mA.
(4) I
B
= 84 mA.
(5) I
B
= 72 mA.
(6) I
B
= 60 mA.
(7) I
B
= 48 mA.
(8) I
B
= 36 mA.
(9) I
B
= 24 mA.
(10) I
B
= 12 mA.
T
amb
=25°C.