Datasheet

2004 Nov 04 6
Philips Semiconductors Product specification
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4350X
006aaa244
10
1
10
2
10
3
Z
th
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
(1)
(5)
(6)
(7)
(8)
(10)
(2)
(3)
(4)
(9)
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
(1) δ =1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ =0.
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
2
.
006aaa245
10
1
10
2
10
3
Z
th
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
(1)
(5)
(6)
(7)
(8)
(10)
(9)
(4)
(3)
(2)
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
(1) δ =1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ =0.
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
2
.