Datasheet

2004 Nov 04 5
Philips Semiconductors Product specification
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4350X
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
2
.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm
2
.
4. Device mounted on a ceramic printed-circuit board 7 cm
2
, single-sided copper, tin-plated.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air
note 1 225 K/W
note 2 125 K/W
note 3 90 K/W
note 4 80 K/W
R
th(j-s)
thermal resistance from junction to soldering point 16 K/W
006aaa243
10
1
10
2
10
3
Z
th
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
(1)
(6)
(7)
(8)
(9)
(10)
(5)
(2)
(3)
(4)
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
(1) δ =1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ =0.
Mounted on FR4 printed-circuit board; standard footprint.