Datasheet

2004 Nov 04 2
Philips Semiconductors Product specification
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4350X
FEATURES
• SOT89 (SC-62) package
• Low collector-emitter saturation voltage V
CEsat
• High collector current capability: I
C
and I
CM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT89 plastic package.
PNP complement: PBSS5350X.
MARKING
TYPE NUMBER MARKING CODE
PBSS4350X S43
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
sym042
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 50 V
I
C
collector current (DC) 3 A
I
CM
peak collector current 5 A
R
CEsat
equivalent on-resistance 130 mΩ