Datasheet

PBSS4350SPN_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 5 April 2007 8 of 19
NXP Semiconductors
PBSS4350SPN
50 V, 2.7 A NPN/PNP low V
CEsat
(BISS) transistor
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
TR2; PNP low V
CEsat
transistor
I
CBO
collector-base cut-off
current
V
CB
= −50 V; I
E
=0A - - −100 nA
V
CB
= −50 V; I
E
=0A;
T
j
= 150 °C
--−50 µA
I
CES
collector-emitter
cut-off current
V
CE
= −50 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −100 mA 200 340 -
V
CE
= −2 V; I
C
= −500 mA
[1]
200 290 -
V
CE
= −2 V; I
C
= −1A
[1]
180 250 -
V
CE
= −2 V; I
C
= −2A
[1]
130 180 -
V
CE
= −2 V; I
C
= −2.7 A
[1]
95 135 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
= −0.5 A; I
B
= −50 mA - −60 −90 mV
I
C
= −1 A; I
B
= −50 mA - −125 −180 mV
I
C
= −2 A; I
B
= −100 mA - −225 −320 mV
I
C
= −2 A; I
B
= −200 mA - −190 −280 mV
I
C
= −2.7 A; I
B
= −270 mA - −255 −370 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −2 A; I
B
= −200 mA
[1]
- 95 140 mΩ
V
BEsat
base-emitter
saturation voltage
[1]
I
C
= −2 A; I
B
= −100 mA - −0.95 −1.1 V
I
C
= −2.7 A; I
B
= −270 mA - −1 −1.2 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2 V; I
C
= −1A
[1]
- −0.8 −1.2 V
t
d
delay time V
CC
= −10 V; I
C
= −2A;
I
Bon
= −100 mA;
I
Boff
= 100 mA
-9-ns
t
r
rise time - 54 - ns
t
on
turn-on time - 63 - ns
t
s
storage time - 190 - ns
t
f
fall time - 50 - ns
t
off
turn-off time - 240 - ns
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
- 2535pF
Table 8. Characteristics
…continued
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit