Datasheet

PBSS4350SPN_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 5 April 2007 7 of 19
NXP Semiconductors
PBSS4350SPN
50 V, 2.7 A NPN/PNP low V
CEsat
(BISS) transistor
7. Characteristics
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
TR1; NPN low V
CEsat
transistor
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
V
CB
=50V; I
E
=0A;
T
j
= 150 °C
--50µA
I
CES
collector-emitter
cut-off current
V
CE
=50V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V; I
C
= 100 mA 300 520 -
V
CE
=2V; I
C
= 500 mA
[1]
300 500 -
V
CE
=2V; I
C
=1A
[1]
300 470 -
V
CE
=2V; I
C
=2A
[1]
200 340 -
V
CE
=2V; I
C
= 2.7 A
[1]
120 180 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
= 0.5 A; I
B
= 50 mA - 50 80 mV
I
C
= 1 A; I
B
= 50 mA - 100 160 mV
I
C
= 2 A; I
B
= 100 mA - 190 280 mV
I
C
= 2 A; I
B
= 200 mA - 180 260 mV
I
C
= 2.7 A; I
B
= 270 mA - 240 340 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 2 A; I
B
= 200 mA
[1]
- 90 130 mΩ
V
BEsat
base-emitter
saturation voltage
[1]
I
C
= 2 A; I
B
= 100 mA - 0.95 1.1 V
I
C
= 2.7 A; I
B
= 270 mA - 1.1 1.2 V
V
BEon
base-emitter turn-on
voltage
V
CE
=2V; I
C
=1A
[1]
- 0.8 1.2 V
t
d
delay time V
CC
=10V; I
C
=2A;
I
Bon
= 100 mA;
I
Boff
= −100 mA
-8-ns
t
r
rise time - 96 - ns
t
on
turn-on time - 104 - ns
t
s
storage time - 355 - ns
t
f
fall time - 165 - ns
t
off
turn-off time - 520 - ns
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- 1825pF