Datasheet

PBSS4350SPN_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 5 April 2007 5 of 19
NXP Semiconductors
PBSS4350SPN
50 V, 2.7 A NPN/PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 227 K/W
[2]
- - 144 K/W
[3]
--87K/W
R
th(j-sp)
thermal resistance from
junction to solder point
--40K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 167 K/W
[2]
- - 104 K/W
[3]
--63K/W
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aaa809
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
1.0
duty cycle =