Datasheet

PBSS4350SPN_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 5 April 2007 4 of 19
NXP Semiconductors
PBSS4350SPN
50 V, 2.7 A NPN/PNP low V
CEsat
(BISS) transistor
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves
T
amb
(°C)
−75 17512525 75−25
006aaa967
1.0
1.5
0.5
2.0
2.5
P
tot
(W)
0
(1)
(2)
(3)