Datasheet

PBSS4350SPN_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 5 April 2007 3 of 19
NXP Semiconductors
PBSS4350SPN
50 V, 2.7 A NPN/PNP low V
CEsat
(BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 2.7 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-5A
I
B
base current - 0.5 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 0.55 W
[2]
- 0.87 W
[3]
- 1.43 W
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 0.75 W
[2]
- 1.2 W
[3]
-2W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C