Datasheet

PBSS4350SPN_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 5 April 2007 2 of 19
NXP Semiconductors
PBSS4350SPN
50 V, 2.7 A NPN/PNP low V
CEsat
(BISS) transistor
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
2. Pinning information
3. Ordering information
4. Marking
TR2; PNP low V
CEsat
transistor
V
CEO
collector-emitter voltage open base - - −50 V
I
C
collector current - - −2.7 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
--−5A
R
CEsat
collector-emitter
saturation resistance
I
C
= −2A;
I
B
= −200 mA
[1]
- 95 140 mΩ
Table 2. Quick reference data
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 3. Pinning
Pin Description Simplified outline Symbol
1 emitter TR1
2 base TR1
3 emitter TR2
4 base TR2
5 collector TR2
6 collector TR2
7 collector TR1
8 collector TR1
4
5
1
8
006aaa985
8765
1234
TR1 TR2
Table 4. Ordering information
Type number Package
Name Description Version
PBSS4350SPN SO8 plastic small outline package; 8 leads; body width
3.9 mm
SOT96-1
Table 5. Marking codes
Type number Marking code
PBSS4350SPN 4350SPN