Datasheet

PBSS4350SPN_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 5 April 2007 10 of 19
NXP Semiconductors
PBSS4350SPN
50 V, 2.7 A NPN/PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
Fig 10. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 11. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
Fig 12. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa972
10
−1
10
−2
1
V
CEsat
(V)
10
−3
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
006aaa973
10
−1
10
−2
1
V
CEsat
(V)
10
−3
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
I
C
(mA)
10
−1
10
4
10
3
110
2
10
006aaa974
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
I
C
(mA)
10
−1
10
4
10
3
110
2
10
006aaa975
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)