Datasheet

2001 Jul 13 4
NXP Semiconductors Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
= 0 − − 100 nA
V
CB
= 50 V; I
E
= 0; T
j
= 150 °C − − 50 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 2 V; I
C
= 500 mA 200 − −
V
CE
= 2 V; I
C
= 1 A; note 1 200 − −
V
CE
= 2 V; I
C
= 2 A; note 1 100 − −
V
CEsat
collector -emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA − − 90 mV
I
C
= 1 A; I
B
= 50 mA − − 170 mV
I
C
= 2 A; I
B
= 200 mA; note 1 − − 290 mV
R
CEsat
equivalent on-resistance I
C
= 2 A; I
B
= 200 mA; note 1 − 110 <145 mΩ
V
BEsat
base-emitter saturation voltage I
C
= 2 A; I
B
= 200 mA; note 1 − − 1.2 V
V
BEon
base-emitter turn-on voltage V
CE
= 2 V; I
C
= 1 A; note 1 − − 1.1 V
f
T
transition frequency I
C
= 100 mA; V
CE
= 5 V; f = 100 MHz 100 − − MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz − − 30 pF