Datasheet

2001 Jul 13 2
NXP Semiconductors Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistors due to enhanced performance.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC convertor applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT457 (SC-74) plastic
package. PNP complement: PBSS5350D.
MARKING
TYPE NUMBER MARKING CODE
PBSS4350D 43
PINNING
PIN DESCRIPTION
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
handbook, halfpage
MAM436Top view
1, 2, 5, 6
4
3
132
4
56
Fig.1 Simplified outline (SOT457; SC-74) and
symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 50 V
I
CM
peak collector current 5 A
R
CEsat
equivalent on-resistance <145 mΩ