Datasheet

2004 Dec 06 9
NXP Semiconductors Product data sheet
30 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4330X
handbook, halfpage
0.2
1.2
0.8
1.0
MRC325
10
−1
11010
2
10
3
10
4
0.6
0.4
V
BEsat
(V)
I
C
(mA)
(2)
(3)
(1)
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 100 °C.
handbook, halfpage
0 2.0
5
0
1
2
3
4
0.4 0.8 1.2 1.6
MRC326
V
CE
(V)
I
C
(A)
(1)
(2)
(3)
(4)
(5)
(8)
(9)
(10)
(6)
(7)
Fig.11 Collector current as a function of
collector-emitter voltage; typical values.
T
amb
= 25 °C.
(1) I
B
= 25.0 mA.
(2) I
B
= 22.5 mA.
(3) I
B
= 20.0 mA.
(4) I
B
= 17.5 mA.
(5) I
B
= 15.0 mA.
(6) I
B
= 12.5 mA.
(7) I
B
= 10.0 mA.
(8) I
B
= 7.5 mA.
(9) I
B
= 5.0 mA.
(10) I
B
= 2.5 mA.
handbook, halfpage
10
2
10
1
10
−1
10
−2
MRC327
10
−1
110 10
3
10
4
10
2
R
CEsat
(Ω)
I
C
(mA)
(1)
(2)
(3)
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 100 °C. (2) T
amb
= 25 °C. (3) T
amb
= −55 °C.
handbook, halfpage
MRC328
10
−1
11010
2
10
3
10
4
10
−1
10
−2
1
10
10
2
10
3
R
CEsat
(Ω)
I
C
(mA)
(1)
(2)
(3)
Fig.13 Equivalent on-resistance as a function of
collector current; typical values.
(1) I
C
/I
B
= 10. (2) I
C
/I
B
= 5. (3) I
C
/I
B
= 1.
T
amb
= 25 °C.