Datasheet

2004 Dec 06 2
NXP Semiconductors Product data sheet
30 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4330X
FEATURES
• SOT89 (SC-62) package
• Low collector-emitter saturation voltage V
CEsat
• High collector current capability: I
C
and I
CM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications
(e.g.
lamps and LEDs)
– Inductive load driver (e.g. relays, buzzers
and
motors).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT89 plastic package.
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PBSS4330X *1R
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 30 V
I
C
collector current (DC) 3 A
I
CM
peak collector current 5 A
R
CEsat
equivalent on-resistance 100 mΩ
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
sym04
2
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS4330X SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89