Datasheet

PBSS4330PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 19 April 2010 6 of 15
NXP Semiconductors
PBSS4330PA
30 V, 3 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
=30V; I
E
= 0 A - - 100 nA
V
CB
=30V; I
E
=0A;
T
j
= 150 °C
--50μA
I
CES
collector-emitter
cut-off current
V
CE
=30V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base
cut-off current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V
[1]
I
C
= 0.5 A 300 465 -
I
C
= 1 A 270 435 700
I
C
= 2 A 230 370 -
I
C
= 3 A 180 310 -
V
CEsat
collector-emitter
saturation voltage
I
C
=0.5A; I
B
=50mA
[1]
- 4060mV
I
C
=1A; I
B
=50mA
[1]
-80110mV
I
C
=2A; I
B
= 100 mA
[1]
- 155 220 mV
I
C
=3A; I
B
= 300 mA
[1]
- 220 300 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=3A; I
B
= 300 mA
[1]
- 75 100 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
=2A; I
B
= 100 mA
[1]
- 0.95 1.1 V
I
C
=3A; I
B
= 300 mA
[1]
- 1.07 1.2 V
V
BEon
base-emitter
turn-on voltage
V
CE
=2V; I
C
=1A
[1]
-0.761V
t
d
delay time V
CC
=9V; I
C
=2A;
I
Bon
=0.1A;
I
Boff
= −0.1 A
-11-ns
t
r
rise time - 52 - ns
t
on
turn-on time - 63 - ns
t
s
storage time - 230 - ns
t
f
fall time - 40 - ns
t
off
turn-off time - 270 - ns
f
T
transition frequency V
CE
=5V; I
C
= 100 mA;
f=100MHz
100 210 - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- 2130pF