Datasheet

2004 Nov 03 9
NXP Semiconductors Product data sheet
20 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4320X
handbook, halfpage
0.2
1.2
0.4
0.6
0.8
1
MLE382
10
−1
1
(1)
10
I
C
(mA)
V
BEsat
(V)
10
2
10
3
10
4
(3)
(2)
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 100 °C.
handbook, halfpage
10
3
10
2
10
1
10
−2
10
−1
MLE379
10
−1
110
I
C
(mA)
R
CEsat
(Ω)
10
3
10
2
10
4
(1)
(2)
(3)
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
T
amb
= 25 °C.
(1) I
C
/I
B
= 100. (2) I
C
/I
B
= 50. (3) I
C
/I
B
= 10.
mle380
10
2
10
10
−1
10
−2
1
10
−1
1
R
CEsat
(Ω)
I
C
(mA)
10 10
2
10
3
10
4
(3)
(1)
(2)
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 100 °C. (2) T
amb
= 25 °C. (3) T
amb
= −55 °C.
handbook, halfpage
02
5
0
1
2
3
4
0.4
V
CE
(V)
I
C
(A)
0.8 1.2 1.6
MLE378
(9)
(8)
(7)
(6)
(5)
(1)
(3)
(10)
(4)
(2)
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 25 mA.
(2) I
B
= 22.5 mA.
(3) I
B
= 20 mA.
(4) I
B
= 17.5 mA.
(5) I
B
= 15 mA.
(6) I
B
= 12.5 mA.
(7) I
B
= 10 mA.
(8) I
B
= 7.5 mA.
(9) I
B
= 5 mA.
(10) I
B
= 2.5 mA.
T
amb
= 25 °C.