Datasheet

NXP Semiconductors
PBSS4240X
40 V, 2 A NPN low VCEsat (BISS) transistor
PBSS4240X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 15 October 2012 2 / 12
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 E emitter
2 C collector
3 B base
3 2 1
SOT89
sym123
C
E
B
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PBSS4240X SOT89 plastic surface-mounted package; die pad for good heat transfer;
3 leads
SOT89
4. Marking
Table 4. Marking codes
Type number Marking code
PBSS4240X S47
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 40 V
V
CEO
collector-emitter voltage open base - 40 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 2 A
I
CRM
repetitive peak collector current δ ≤ 0.33 ; t
p
≤ 20 ms; pulsed - 2.5 A
I
CM
peak collector current - 3 A
I
B
base current - 300 mA
I
BM
peak base current - 1 A
[1] - 0.5 WP
tot
total power dissipation
[2] - 0.95 W