Datasheet

2003 Jan 30 6
NXP Semiconductors Product data sheet
40 V low V
CEsat
NPN transistor
PBSS4240V
handbook, halfpage
02
2
0
0.4
0.8
1.2
1.6
0.4
V
CE
(V)
I
C
(A)
0.8 1.2 1.6
MHC475
(7)
(10)
(8)
(6)
(5)
(4)
(9)
(1)
(2)
(3)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 3 mA.
(2) I
B
= 2.7 mA.
(3) I
B
= 2.4 mA.
(4) I
B
= 2.1 mA.
(5) I
B
= 1.8 mA.
(6) I
B
= 1.5 mA.
(7) I
B
= 1.2 mA.
(8) I
B
= 0.9 mA.
(9) I
B
= 0.6 mA.
(10) I
B
= 0.3 mA.
T
amb
= 25 °C.
handbook, halfpage
MHC476
10
3
10
2
1
10
−1
10
10
−1
1
R
CEsat
(Ω)
I
C
(mA)
10 10
2
10
3
10
4
(3)
(1)
(2)
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C. (2) T
amb
= 25 °C. (3) T
amb
= −55 °C.