Datasheet

2003 Jan 30 4
NXP Semiconductors Product data sheet
40 V low V
CEsat
NPN transistor
PBSS4240V
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 40 V; I
E
= 0 − − 100 nA
V
CB
= 40 V; I
E
= 0; T
amb
= 150 °C − − 50 μA
I
CEO
collector-emitter cut-off current V
CE
= 30 V; I
B
= 0 − − 100 nA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 5 V; I
C
= 1 mA 300 − −
V
CE
= 5 V; I
C
= 500 mA 300 − 900
V
CE
= 5 V; I
C
= 1 A 200 − −
V
CE
= 5 V; I
C
= 2 A; note 1 75 − −
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 1 mA − 50 75 mV
I
C
= 500 mA; I
B
= 50 mA − 70 100 mV
I
C
= 1 A; I
B
= 100 mA; note 1 − 150 190 mV
I
C
= 2 A; I
B
= 200 mA; note 1 − 300 400 mV
R
CEsat
equivalent on-resistance I
C
= 1 A; I
B
= 100 mA; note 1 − 150 <190 mΩ
V
BEsat
base-emitter saturation voltage I
C
= 1 A; I
B
= 100 mA − − 1.2 V
V
BEon
base-emitter turn-on voltage V
CE
= 5 V; I
C
= 1 A − − 1.1 V
f
T
transition frequency I
C
= 50 mA; V
CE
= 10 V;
f
= 100 MHz
150 − − MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz − − 10 pF