Datasheet

2003 Jan 30 3
NXP Semiconductors Product data sheet
40 V low V
CEsat
NPN transistor
PBSS4240V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a ceramic circuit board, Al
2
O
3
, standard footprint.
2. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width t
p
≤ 30 ms.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
3. Device mounted on a ceramic circuit board, Al
2
O
3
, standard footprint.
4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width t
p
≤ 30 ms.
Soldering
The only recommended soldering method is reflow soldering.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 40 V
V
CEO
collector-emitter voltage open base − 40 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) note 1 − 2 A
I
CRP
repetitive peak collector current note 2 − 2 A
I
CM
peak collector current − 3 A
I
B
base current (DC) − 300 mA
I
BM
peak base current − 1 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 3 − 300 mW
T
amb
≤ 25 °C; note 4 − 500 mW
T
amb
≤ 25 °C; note 1 − 900 mW
T
amb
≤ 25 °C; notes 2 and 3 − 1.2 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1 410 K/W
note 2 215 K/W
note 3 140 K/W
notes 1 and 4 110 K/W