DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product data sheet 2003 Jan 30
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability IC and ICM VCEO collector-emitter voltage 40 V IC collector current (DC) 2 A • High efficiency leading to reduced heat generation ICRP peak collector current 2 A • Reduced printed-circuit board area requirements.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V MHC471 800 MHC472 1.2 handbook, halfpage handbook, halfpage hFE VBE (1) (V) 600 (1) 0.8 (2) (2) 400 (3) 0.4 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V MHC475 2 IC (A) MHC476 103 handbook, halfpage (1) (2) (3) handbook, halfpage RCEsat (Ω) (4) (5) (6) 1.6 102 (7) 1.2 (8) 10 (9) (10) 0.8 1 0.4 (1) 10−1 10−1 0 0.8 0.4 0 1.2 1.6 2 VCE (V) (2) (3) 1 10 102 103 104 IC (mA) Tamb = 25 °C. (1) (2) (3) (4) IB = 3 mA. IB = 2.7 mA. IB = 2.4 mA. IB = 2.1 mA. (5) (6) (7) (8) IB = 1.8 mA. IB = 1.5 mA. IB = 1.2 mA. IB = 0.9 mA. (9) IB = 0.6 mA.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
