Datasheet

2004 Jan 09 2
NXP Semiconductors Product data sheet
40 V; 2 A NPN low V
CEsat
(BISS) transistor
PBSS4240T
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistors.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT23 plastic package.
PNP complement: PBSS5240T.
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PBSS4240T ZE*
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 40 V
I
CM
peak collector current 3 A
R
CEsat
equivalent on-resistance <200 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS4240T − plastic surface mounted package; 3 leads SOT23