Datasheet

2003 Sep 29 2
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low V
CEsat
(BISS) transistor
PBSS4230T
FEATURES
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High efficiency leading to less heat generation
Reduced printed-circuit board requirements
Cost effective alternative to MOSFETs in specific
applications.
APPLICATIONS
Power management
DC/DC conversion
Supply line switching
Battery charger
LCD backlighting.
Peripheral driver
Driver in low supply voltage applications (e.g. lamps
and LEDs)
Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
NPN BISS transistor in a SOT23 plastic package providing
ultra low V
CEsat
and R
CEsat
parameters.
PNP complement: PBSS5230T.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PBSS4230T *3D
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 30 V
I
C
collector current (DC) 2 A
I
CM
peak collector current 3 A
R
CEsat
equivalent on-resistance 200 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS4230T plastic surface mounted package; 3 leads SOT23