Datasheet

NXP Semiconductors
PBSS4230PAN
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
PBSS4230PAN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 14 December 2012 12 / 17
006aad192
10
-1
10
-2
1
V
CEsat
(V)
10
-3
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 14. Collector-emitter saturation voltage as a
function of collector current; typical values
006aad193
10
-1
10
-2
1
V
CEsat
(V)
10
-3
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 15. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
006aad194
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 16. Collector-emitter saturation resistance as a
function of collector current; typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
006aad195
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 17. Collector-emitter saturation resistance as a
function of collector current; typical values