Datasheet

PBSS4220V_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 7 of 13
NXP Semiconductors
PBSS4220V
20 V, 2 A NPN low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 8. Collector-emitter saturation resistance as a
function of collector current; typical values
T
amb
=25°CT
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa666
0.6
0.8
0.4
1.0
1.2
V
BEsat
(V)
0.2
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(3)
(2)
(1)
006aaa667
10
1
10
2
R
CEsat
(Ω)
10
−1
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
006aaa668
V
CE
(V)
054231
0.8
1.2
0.4
1.6
2.0
I
C
(A)
0
I
B
(mA) = 8.0
4.0
3.2
2.4
1.6
0.8
7.2
6.4
5.6
4.8
006aaa669
I
C
(mA)
10
−1
10
4
10
3
110
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(3)
(2)
(1)