Datasheet

PBSS4220V_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 5 of 13
NXP Semiconductors
PBSS4220V
20 V, 2 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=20V; I
E
=0A --0.1μA
V
CB
=20V; I
E
=0A;
T
j
= 150 °C
--50μA
I
CES
collector-emitter cut-off
current
V
CE
=20V; V
BE
=0V --0.1μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
=0A --0.1μA
h
FE
DC current gain V
CE
=2V; I
C
= 1 mA 220 480 -
V
CE
=2V; I
C
= 100 mA 220 440 -
V
CE
=2V; I
C
=500mA
[1]
220 410 -
V
CE
=2V; I
C
=1A
[1]
200 360 -
V
CE
=2V; I
C
=2A
[1]
120 220 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
=1mA - 3555mV
I
C
= 500 mA; I
B
=50mA
[1]
- 7095mV
I
C
=1A; I
B
=50mA
[1]
-145180mV
I
C
=1A; I
B
=100mA
[1]
-140175mV
I
C
=2A; I
B
=100mA
[1]
-275355mV
I
C
=2A; I
B
=200mA
[1]
-270350mV
R
CEsat
collector-emitter
saturation resistance
I
C
=1A; I
B
=100mA
[1]
-140175mΩ
V
BEsat
base-emitter saturation
voltage
I
C
=1A; I
B
=50mA
[1]
- 0.95 1.1 V
I
C
=1A; I
B
=100mA
[1]
-11.2V
V
BEon
base-emitter turn-on
voltage
V
CE
=5V; I
C
=1A - 0.8 1.1 V
t
d
delay time I
C
=1A; I
Bon
=50mA;
I
Boff
= −50 mA
-9-ns
t
r
rise time - 29 - ns
t
on
turn-on time - 38 - ns
t
s
storage time - 200 - ns
t
f
fall time - 40 - ns
t
off
turn-off time - 240 - ns
f
T
transition frequency V
CE
=10V; I
C
=50mA;
f = 100 MHz
-210-MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
-11-pF