Datasheet

NXP Semiconductors
PBSS4160PANP
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 14 January 2013 13 / 21
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
006aad210
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 16. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
006aad211
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 17. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aad212
200
300
100
400
500
h
FE
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
V
CE
= −2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 18. TR2 (PNP): DC current gain as a function of
collector current; typical values
V
CE
(V)
0 -5-4-2 -3-1
006aad213
-0.50
-0.75
-0.25
-1.00
-1.50
I
C
(A)
0
I
B
= -20 mA
-18 -16 -14
-2
-12
-10
-8
-6
-4
T
amb
= 25 °C
Fig. 19. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values