Datasheet

NXP Semiconductors
PBSS4160PAN
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
PBSS4160PAN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 14 January 2013 12 / 17
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
006aad210
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 16. Collector-emitter saturation resistance as a
function of collector current; typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
006aad211
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 17. Collector-emitter saturation resistance as a
function of collector current; typical values