Datasheet

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 6 of 14
NXP Semiconductors
PBSS4160DS
60 V, 1 A NPN/NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
=60V; I
E
= 0 A - - 100 nA
V
CB
=60V; I
E
=0A;
T
j
= 150 °C
--50μA
I
CES
collector-emitter cut-off
current
V
CE
=60V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base cut-off current V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V; I
C
= 1 mA 250 500 -
V
CE
=5V; I
C
=500mA
[1]
200 420 -
V
CE
=5V; I
C
=1A
[1]
100 180 -
V
CEsat
collector-emitter saturation
voltage
I
C
= 100 mA; I
B
=1mA - 90 110 mV
I
C
= 500 mA; I
B
= 50 mA - 115 140 mV
I
C
=1A; I
B
=100mA
[1]
- 200 250 mV
R
CEsat
collector-emitter saturation
resistance
I
C
=1A; I
B
=100mA
[1]
- 200 250 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
=1A; I
B
=50mA
[1]
- 0.95 1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
=5V; I
C
=1A
[1]
- 0.82 0.9 V
t
d
delay time I
C
=0.5A; I
Bon
=25mA;
I
Boff
= −25 mA
-11-ns
t
r
rise time - 78 - ns
t
on
turn-on time - 90 - ns
t
s
storage time - 340 - ns
t
f
fall time - 160 - ns
t
off
turn-off time - 500 - ns
f
T
transition frequency V
CE
=10V; I
C
=50mA;
f = 100 MHz
150 220 - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- 5.5 10 pF