Datasheet

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 4 of 14
NXP Semiconductors
PBSS4160DS
60 V, 1 A NPN/NPN low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--431K/W
[2]
--338K/W
[3]
--278K/W
R
th(j-sp)
thermal resistance from
junction to solder point
--105K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--298K/W
[2]
--223K/W
[3]
--179K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
006aaa494
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0.10
0.05
0.02
0.01
0
δ = 1
0.75
0.50
0.33
0.20